MITSUBISHI IGBT MODULE CM150DY-12H

MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol Ratings Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (TC = 25°C) IC 150 Amperes Peak Collector Current ICM 300* Amperes Emitter Current** (TC = 25°C) IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m Weight – 270 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V – 2.1 2.8** Volts IC = 150A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 450 – nC Emitter-Collector Voltage VEC IE = 150A, VGE = 0V – – 2.8 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 15 nF Output Capacitance Coes VGE = 0V, VCE = 10V – – 5.3 nF Reverse Transfer Capacitance Cres – – 3 nF Resistive Turn-on Delay Time td(on) – – 200 ns Load Rise Time tr VCC = 300V, IC = 150A, – – 550 ns Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 300 ns Times Fall Time tf – – 300 ns Diode Reverse Recovery Time trr IE = 150A, diE/dt = –300A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = –300A/µs – 0.41 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.065 °C/W